Miniature 3-D Inductors in Standard CMOS Process
نویسندگان
چکیده
The structure of the miniature three–dimensional (3-D) inductor is presented in this paper. The proposed miniature 3-D inductors have been fabricated in a standard digital 0.35m one-poly-four-metal (1P4M) CMOS process. According to the measurement results, the self-resonance frequency SR of the proposed miniature 3-D inductor is 34% higher than the conventional stacked inductor. Moreover, the proposed miniature 3-D inductor occupies only 16% of the area of the conventional planar spiral inductor with the same inductance and maximum quality factor max. A 2.4-GHz CMOS low-noise amplifier (LNA), which utilized the proposed miniature 3-D inductors, has also been fabricated. By virtue of the small area of the miniature 3-D inductor, the size and cost of the radio frequency (RF) chip can be significantly reduced.
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